MYXxxSMS04GP32xxx-45/x

The Micross 4Gb Hermetic Space Grade Spin Torque MRAM, is manufactured utilizing Avalanche Technologies magneto-resistive random-access memory. This MRAM device architecture is analogous to Flash technology with an SRAM compatible READ/WRITE interface, a Configuration Register with enhanced ECC functionality and a Page Mode feature for improved performance. Data is non-volatile with a near infinite endurance and best in class, non-volatile memory data retention.

Benefits

Optimal Design

• Smallest hermetic Rad-Hard MRAM package available
• Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
• Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
• MRAM memory offers the fastest access time of non-volatile memories
• Best power profile of all non-volatile memories
  • Standby current: 5.5mA; Active current: 90mA

Flexible Package Options

• LGA, BGA, & CGA ceramic packages options available in 142 pad/solder-ball/Columns provides integration flexibility

Applications

• Space grade processor based systems and FPGA boards
• LEO, MEO, GEO, and HEO space missions
• Satellites
• Launch vehicles
• Space systems and vehicles
• Aerospace Systems