EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, automotive, power inverters, remote imaging and sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

With 40+ years bare die supply expertise, Micross is proud to be a product support partner for EPC’s GaN technology offerings. Micross supplements EPC’s GaN product line and provides a one source solution for customers requiring mission-critical microelectronic components or custom packaging solutions to meet customer’s design and performance goals.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

  • Micross & EPC collaborate to offer an extensive range of GaN capabilities to support Aerospace & Defense, Automotive, Commercial, Industrial, Communications, Computing, Consumer and Medical markets.
eGaN transistors are faster, smaller, more efficient and lower cost.

How can EPC GaN Products help you?

If you’re looking for faster, more efficient technology, gallium nitride (GaN)-based power management may be the solution for you. Micross provides EPC GaN products in Die Form as well as fully packaged solutions to meet your unique design and performance requirements.

We would be happy to discuss how we could support your specific needs.