Orlando, FL, October 23, 2020 – Micross Components, Inc. (“Micross”), the world’s largest supplier of value-added bare die and a leading global mission-critical microelectronic components and services provider for high-reliability markets and Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs have signed a new agreement establishing Micross as an authorized worldwide supplier of EPC GaN products offered in Die Form.
This new agreement combines the superior performance and reliability of EPC’s GaN technology with Micross’ portfolio of capabilities that will further strengthen our one source service offering for customers requiring microelectronic components or custom packaging solutions to meet their unique design and performance goals.
“EPC’s GaN technology solutions are a perfect complement to Micross’ global expertise in providing mission-critical component and services to our hi-reliability customers,” said Tony Hamby, Sr. VP of Global Die. “We are excited about bringing together our combined expertise to further meet customer applications that require higher frequency, efficiency and greater power density solutions.”
Micross (www.micross.com) is the global one-source provider of mission-critical microelectronic components and services, including Bare Die & Wafers, Advanced Interconnect Technology, Custom Packaging & Assembly, Component Modification Services, Electrical & Environmental Testing and Hi-Rel Products to manufacturers and users of semiconductor devices. In business for more than 40 years, Micross’ extensive hi-reliability capabilities serve the Aerospace & Defense, Space, Medical and Industrial markets, among others. Micross possesses the sourcing, packaging, assembly, engineering, test and logistics expertise needed to support an application throughout its entire program cycle.
Valerie Thomas, Micross Components
EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, automotive, power inverters, remote imaging and sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.