Part Number: MYXxxSMSxxxxPxxxxx-xx/x
Micross’ ceramic hermetic space-grade MRAM, utilizing Avalanche Technologies spin-torque magneto-resistive random-access memory, offers true random read/write access while being highly resistant to magnetic flux & radiation. These inherent characteristics mitigate the need for radiation shielding, while providing near infinite endurance and best-in-class non-volatile memory data retention.
Benefits
Optimal Design
- Smallest hermetic Rad-Hard MRAM package available
- Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
- Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
- MRAM memory offers the fastest access time of non-volatile memories
- Best power profile of all non-volatile memories
- Standby current: 3.5uA; Active current: 20mA
Flexible Package Options
- LGA & BGA ceramic packages available in 48 & 60 pad/solder-ball options provides integration flexibility
Applications
- Space grade processor based systems and FPGA boards
- LEO, MEO, GEO, and HEO space missions
- Satellites
- Launch vehicles
- Space systems and vehicles
- Aerospace Systems
Key Features
- 40nm pMTJ STT-MRAM (Perpendicular Magnetic Tunnel Junction)
- Inherently Rad-Hard MRAM technology
- 16Mb of Spin-Torque Persistent MRAM in a single, small footprint & low-profile package (10mm x 10mm x 1.65mm)
- Density Organization: 16Mb, 2M x 8; 16Mb, 1M x 16
- Access performance: 45ns min.
- Quality Flows
- Space Flows
- Rad-Hard (RH): 300 krad TID
- Rad-Tolerant (RT): 100 krad TID
- Military Flows
- Rad-Tolerant (RT): 100 krad TID
- Non-Rad
- Space Flows
- Excellent Single Event Effects (SEE) Performance
- SEU tolerance > 120.7 MeV cm2/mg
- SEL threshold > 85.4 MeV cm2/mg
- Operating Voltage Range: VCC: 2.70V - 3.60V
- Temperature range: -55°C to +125°C