Part Number: MYXxxSMS01GP32xxx-45/x

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Micross’ ceramic hermetic space-grade MRAM, utilizing Avalanche Technologies spin-torque magneto-resistive random-access memory, offers true random read/write access while being highly resistant to magnetic flux & radiation. These inherent characteristics mitigate the need for radiation shielding, while providing near infinite endurance and best-in-class non-volatile memory data retention. This MRAM device architecture is analogous to Flash technology with an SRAM compatible READ/WRITE interface with an added performance enhancement, an Asynchronous Page Mode feature.

Optimal Design
  • Smallest hermetic Rad-Hard MRAM package available
  • Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
  • Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
  • MRAM memory offers the fastest access time of non-volatile memories
  • Best power profile of all non-volatile memories
    • Standby current: 5.5mA; Active current: 90mA
Flexible Package Options
  • LGA, BGA, & CGA ceramic packages options available in 142 pad/solder-ball/Columns provides integration flexibility
  • Space grade processor based systems and FPGA boards
  • LEO, MEO, GEO, and HEO space missions
  • Satellites
  • Launch vehicles
  • Space systems and vehicles
  • Aerospace Systems

Key Features
    • 22nm pMTJ STT-MRAM (Perpendicular Magnetic Tunnel Junction)
    • Inherently Rad-Hard MRAM technology
    • Spin-Torque Persistent MRAM in a single, small footprint & low-profile package (LGA/BGA: 18mm x 20mm x 1.65mm) (CGA: 18mm x 20mm x 3.31mm)
      • CGA Column: 0.51mm Diameter, 2.21mm Height
      • Density Organization: 1Gb, 32M x 32
    • Advanced ECC with configuration register
    • Asynchronous Page Mode feature
    • Access performance: 45ns min.
    Operating & Environmental Specifications
    • Quality Flows
      • Qualified Encapsulated Device (QED)
        • NASA EEE-INST-002, Sec. M4, Level-2
      • Rad-Tolerant (RT): 100 krad TID
      • Non-Rad
    • Excellent Single Event Effects (SEE) Performance
      • SEU tolerance > 120.7 MeV cm2/mg
      • SEL threshold > 85.4 MeV cm2/mg
    • Operating Voltage Range: VCC: 2.70V - 3.60V
    • Temperature range: -55°C to +125°C
Data Sheet 🔒 Micross Overview Flyer Space-Grade Ceramic MRAM Flyer

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