MYXxxSMS04GP32PB1-45/x

The Micross 4Gb MRAM Qualified Encapsulated Device (QED), a plastic encapsulated microcircuit screened and Qualified to the NASA electrical, electronic and electromechanical instructions, is a Space Grade, Spin Torque MRAM, manufactured utilizing Avalanche Technologies magneto-resistive random-access memory. This MRAM device, qualified and fully screened to EEE-INST-002, section M4 as a Level 2 PEM is analogous to Flash technology with an SRAM compatible READ/WRITE interface, a Configuration Register with enhanced ECC functionality and a Page Mode feature for improved performance. Data is non-volatile with a near infinite endurance and best in class, non-volatile memory data retention.

Benefits

Optimal Design

• Smallest Plastic Rad-Tolerant MRAM package available
• Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
• Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
• MRAM memory offers the fastest access time of non-volatile memories
• Best power profile of all non-volatile memories
  • Standby current: 5.5mA; Active current: 90mA

Flexible Package Options

• Plastic BGA package available in 142 pad/solder-ball provides integration flexibility

Applications

• Space grade processor based systems and FPGA boards
• LEO, MEO, GEO, and HEO space missions
• Satellites
• Launch vehicles
• Space systems and vehicles
• Aerospace Systems