Part Number: MYXxxSMS01GP32xxx-45/x
Micross’ ceramic hermetic space-grade MRAM, utilizing Avalanche Technologies spin-torque magneto-resistive random-access memory, offers true random read/write access while being highly resistant to magnetic flux & radiation. These inherent characteristics mitigate the need for radiation shielding, while providing near infinite endurance and best-in-class non-volatile memory data retention. This MRAM device architecture is analogous to Flash technology with an SRAM compatible READ/WRITE interface with an added performance enhancement, an Asynchronous Page Mode feature.
Benefits
Optimal Design
- Smallest hermetic Rad-Hard MRAM package available
- Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
- Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
- MRAM memory offers the fastest access time of non-volatile memories
- Best power profile of all non-volatile memories
- Standby current: 5.5mA; Active current: 90mA
Flexible Package Options
- LGA, BGA, & CGA ceramic packages options available in 142 pad/solder-ball/Columns provides integration flexibility
Applications
- Space grade processor based systems and FPGA boards
- LEO, MEO, GEO, and HEO space missions
- Satellites
- Launch vehicles
- Space systems and vehicles
- Aerospace Systems
Key Features
- 22nm pMTJ STT-MRAM (Perpendicular Magnetic Tunnel Junction)
- Inherently Rad-Hard MRAM technology
- Spin-Torque Persistent MRAM in a single, small footprint & low-profile package (LGA/BGA: 18mm x 20mm x 1.65mm) (CGA: 18mm x 20mm x 3.31mm)
- CGA Column: 0.51mm Diameter, 2.21mm Height
- Density Organization: 1Gb, 32M x 32
- Advanced ECC with configuration register
- Asynchronous Page Mode feature
- Access performance: 45ns min.
- Quality Flows
- Qualified Encapsulated Device (QED)
- NASA EEE-INST-002, Sec. M4, Level-2
- Rad-Tolerant (RT): 100 krad TID
- Non-Rad
- Qualified Encapsulated Device (QED)
- Excellent Single Event Effects (SEE) Performance
- SEU tolerance > 120.7 MeV cm2/mg
- SEL threshold > 85.4 MeV cm2/mg
- Operating Voltage Range: VCC: 2.70V - 3.60V
- Temperature range: -55°C to +125°C