1Gb Ceramic Space-Grade MRAM

Micross’ ceramic hermetic space-grade MRAM, utilizing Avalanche Technologies spin-torque magneto-resistive random-access memory, offers true random read/write access while being highly resistant to magnetic flux & radiation. These inherent characteristics mitigate the need for radiation shielding, while providing near infinite endurance and best-in-class non-volatile memory data retention. This MRAM device architecture is analogous to Flash technology with an SRAM compatible READ/WRITE interface with an added performance enhancement, an Asynchronous Page Mode feature.

Benefits

Optimal Design

• Smallest hermetic Rad-Hard MRAM package available
• Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
• Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
• MRAM memory offers the fastest access time of non-volatile memories
• Best power profile of all non-volatile memories
  • Standby current: 5.5mA; Active current: 90mA

Flexible Package Options

• LGA & BGA ceramic packages options available in 142 pad/solder-ball provides integration flexibility

Applications

• Space grade processor based systems and FPGA boards
• LEO, MEO, GEO, and HEO space missions
• Satellites
• Launch vehicles
• Space systems and vehicles
• Aerospace Systems