Micross’ qualified encapsulated space-grade MRAM utilizing Avalanche Technologies STT-MRAM, is a plastic encapsulated microcircuit screened and qualified to NASA’s electrical, electronic and electromechanical specifications. The 1Gb QED MRAM offers true random read/write access while being inherently highly resistant to magnetic flux & radiation, mitigating the need for radiation shielding while providing near infinite endurance and best-in-class non-volatile data retention. This MRAM device architecture is analogous to Flash technology with an SRAM compatible read/write interface with ECC and a Asynchronous Page Mode feature for enhanced performance.

Benefits

Optimal Design
  • Smallest Plastic Rad-Tolerant MRAM package available
  • Spin-Torque Transfer technology MRAM is highly resistant to magnetic flux, mitigating the need for radiation shielding
  • Spin-Torque Transfer technology has near infinite endurance and data retention greater than 10 years
  • MRAM memory offers the fastest access time of non-volatile memories
  • Best power profile of all non-volatile memories
    • Standby current: 5.5mA; Active current: 90mA
Flexible Package Options
  • Plastic BGA package available in 142 pad/solder-ball provides integration flexibility

Applications

  • Space grade processor based systems and FPGA boards
  • LEO, MEO, GEO, and HEO space missions
  • Satellites
  • Launch vehicles
  • Space systems and vehicles
  • Aerospace Systems

Key Features

Technology
  • 22nm pMTJ STT-MRAM (Perpendicular Magnetic Tunnel Junction)
  • Inherently Rad-Hard MRAM technology
Performance
  • 1Gb of Spin-Torque Persistent MRAM in a single, small footprint & low-profile package (17mm x 15mm x 1.39mm)
    • Density Organization: 1Gb, 32M x 32
  • Advanced ECC with configuration register
  • Asynchronous Page Mode feature
  • Access performance: 45ns min.
Operating & Environmental Specifications
  • Quality Flows
    • Qualified Encapsulated Device (QED)
      • NASA EEE-INST-002, Sec. M4, Level-2
    • Rad-Tolerant (RT): 100 krad TID
    • Non-Rad
  • Excellent Single Event Effects (SEE) Performance
    • SEU tolerance > 120.7 MeV cm2/mg
    • SEL threshold > 85.4 MeV cm2/mg
  • Operating Voltage Range: VCC: 2.70V - 3.60V
  • Temperature range: -55°C to +125°C

1Gb QED Space-Grade MRAM

Base Part #: MYXxxSMS01GP32PB1-45/x
Package: Plastic BGA