EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, automotive, power inverters, remote imaging and sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

  • Micross & EPC collaborate to offer an extensive range of GaN capabilities to support Aerospace & Defense, Automotive, Commercial, Industrial, Communications, Computing, Consumer and Medical markets.


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With 40+ years bare die supply expertise, Micross is proud to be a product support partner for EPC’s GaN technology offerings. Micross supplements EPC’s GaN product line and provides a one source solution for customers requiring mission-critical microelectronic components or custom packaging solutions to meet customer’s design and performance goals.

Additional Micross Solutions: