EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical space-borne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

EPC Space has been delivering space grade eGaN® discrete devices and modules since 2017. Our products have been in orbit since 2019 with tens of thousands of units on board of satellites flying in LEO and GEO orbit with mission lives of 10+ years.

Micross Components is a stocking distributor of EPC Space and has inventory available as:

  • Bare Die
  • Rad-Hard Components

Featured

RAD HARD GaN PRODUCTS

Packaged Discretes

FBG04N08A 40 V, 8 A GaN FET, 100 mRad/83.7 MeV
FBG04N30B 40 V, 30 A GaN FET, 100 mRad/83.7 MeV
EPC7019G 40 V, 95 A GaN FET, 100 mRad/85 MeV
EPC7014UB 40 V, 60 A GaN FET, 100 mRad/83.7 MeV
FBG10N30B 100 V, 30 A GaN FET, 100 mRad/83.7 MeV
FBG10N05A 100 V, 5 A GaN FET, 100 mRad/83.7 MeV
FBG20N04A 200 V, 4 A GaN FET, 100 mRad/83.7 MeV
FBG20N18B 200 V, 18 A GaN FET, 100 mRad/83.7 MeV
FBG30N04C 300 V, 4 A GaN FET, 100 mRad/83.7 MeV

Drivers and Power Stages

FBS-GAM01P-C-PSE Single Output High-Speed eGaN® HEMT Gate Driver Development Module
FBS-GAM01P-R-PSE Radiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module
FBS-GAM02P-C-PSE 50 V Multifunction Power eGaN® HEMT Gate Driver Development Module
FBS-GAM02P-R-PSE 50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module
FBS-GAM01-P-C50 50 V/12 A Single Low-Side Power Driver Development Module
FBS-GAM01-P-R50 50 V/12 A Radiation-Hardened Single Low-Side Power Driver Module
FBS-GAM01-P-C100 100 V/12 A Single Low-Side Power Driver Development Module
FBS-GAM01-P-R100 100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module
FBS-GAM02-P-C50 50 V/10 A Multifunction Power Development Module
FBS-GAM02-P-R50 50 V/10 A Radiation-Hardened Multifunction Power Module
FBS-GAM04-P-C50 50 V/10 A Dual Low-Side Power Driver Development Module
FBS-GAM04-P-C100 100 V/10 A Dual Low-Side Power Driver Development Module

Die on Ceramic Adaptor

CDA04N08X2 40 V, 8 A GaN FET on adaptor, 100 mRad/83.7 MeV
CDA04N30X1 40 V, 30 A GaN FET on adaptor, 100 mRad/83.7 MeV
CDA10N30X1 100 V, 30 A GaN FET on adaptor, 100 mRad/83.7 MeV
CDA10N05X2 100 V, 5 A GaN FET on adaptor, 100 mRad/83.7 MeV
CDA20N04X4 200 V, 4 A GaN FET on adaptor, 100 mRad/83.7 MeV
CDA20N18X3 200 V, 18 A GaN FET on adaptor, 100 mRad/83.7 MeV
CDA30N04X7 300 V, 4 A GaN FET on adaptor, 100 mRad/83.7 MeV

Demonstration Boards

EPC7C001 FBS-GAM01P-R-PSE and FBG04N30B Switching Evaluation Board
EPC7C002 FBS-GAM01P-R-PSE and FBG10N30B Switching Evaluation Board
EPC7C003 FBS-GAM01P-R-PSE and FBG20N18B Switching Evaluation Board
EPC7C005 Point of Load Evaluation Board (VDD = 50 V, IOUT = 10 A)
EPC7C006 Multiphase Motor Drive Evaluation Board (VDD = 50 V, IPhase = 8 A)  

With 40+ years bare die supply expertise, Micross is proud to be a product support partner for EPC Space and to be the leading global one-source, one-solution provider delivering a comprehensive array of capabilities to meet our customer’s individual requirements.

Micross Value Added Services: