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| February 2012 |
Chip-on-Board Technology.
At some point the technological drive toward miniaturisation must give way to the very real considerations of cost and schedule control. That’s when it pays to have an interconnect partner like Micross Components, with the electronics expertise needed to offer alternatives to custom packaging such as Chip-on-Board, or COB, which can help bridge the gap between innovation and production.
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| December 2011 |
Micross announce agreement with Ipdia.
RF components, baluns, filters, couplers, diplexers, duplexers, transformers, splitters, ASPICS, IPD, TVS and silicon chip capacitors.
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| December 2011 |
Micross Joint Capabilities.
Wafer level services, electrical tests, environmental screening, assembly services, product storage, passive components, standard surface mount resistors, standard MLCCs, PICS technology, wire-bondable si-chip resistors, hi-rel capacitors, higher temp capacitors, integrated passive designs, wire bondable spiral inductors, high temp resistors, testing & qualification and wirebondable chip capacitors.
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| November 2011 |
New Certification for our Crewe site.
Micross Components’ UK Crewe Site Receives BS EN 9100:2009/AS 9100 Rev. C Quality Certification.
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| September 2011 |
Micross Names Mike Deley new GM for US P&S Division.
Micross Components Names Mike Deley as General Manager
of US Products & Services Division.
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| August 2011 |
TI High Temp Die.
High Temperature Product Available in Bare Die Form (Known Good Die) SOP, CHIP ON BOARD, FLIP CHIP, Texas Instruments Hi Rel provides a complete portfolio of standard catalog semiconductor IC’s for extreme temperature operation. These components form a complete signal chain roadmap for high temperature Industrial & Aerospace electronics applications. ADS1278-HT, INA128-HT, MSP430F2619S-HT, OPA211-HT, OPA2333-HT, SN65HVD233-HT, TPS40210-HT, TPS62110-HT, SN65HVD11-HT, REF5025-HT
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| August 2011 |
High Temp Wafer Level Testing
At Micross, we specialise in the selection and identification of bare die that will perform best under high temperature. High Temp devices provide a solution to our customers who require. Product that need to meet extreme temperature operation. Micross offer singulated die, 100% tested to extreme temperature range (200°C).
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| August 2011 |
Micross Components announces new passive component line card.
Novacap, IPDiA, State of the Art, MSI, Syfer, Johanson, Vishay.
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| August 2011 |
Micross Components announces new Bare Die line card.
Fairchild Semiconductor, Analog Devices, Texas Instruments, International Rectifier, Microsemi, Intersil, National Semi, Linear Technology, Sensitron Semi, Diodes inc, Central Semi, Linear Systems, IDT, Vishay, On Semi, ISSI, Supertex, Micron, Cypress, Spansion, Samsung, Atmel.
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| August 2011 |
Exhibiting at MEMs Live UK.
Micross Components are exhibiting at: MEMS Live 2011 at the NEC in Birmingham from the 27th – 29th of September. Visit us at our booth to discuss your die packaging needs. Hall 3A Stand F51.
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| August 2011 |
Engineering Change to Micross Re-termination Process
Flux change from Kester 1429 to Superior 30DS
Date of Implementation of Change:
1st August 2011 for all manual dipping process
8th August 2011 for all Automated dipping process
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| June 2011 |
Micross Components announces global distribution agreement with IPDiA.
IPDiA has developed unique High Density PICS
technology, which brings unprecedented results for 3D Silicon capacitors, Silicon RF, Silicon Sub-mounts and customised solutions.
Combining our expertise with both active and passive components, Micross Components are able to offer our customers a high quality solution, whatever their application
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| June 2011 |
Micross Components introduces buy online capability.
We are now able to offer plastic discretes for purchase through our ecommerce site. With easy access to product datasheets, plus the benefits of no minimum order quantities, fast delivery & global shipping. Buying plastic discretes has never been easier.
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| June 2011 |
Die Assembly.
Die based semiconductor solutions for custom packaging of sensors, mems and high reliability microelectronics.
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| June 2011 |
Products and Services offered.
MICROSS COMPONENTS IS A GLOBAL PROVIDER OF SPECIALIST
SOLUTIONS FOR HI-RELIABILITY APPLICATIONS SPANNING
• COMMERCIAL
• INDUSTRIAL
• SPACE
• MILITARY MARKETS
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| June 2011 |
Micross Announces Availability of TI AFE4110, in bare die Form.
The AFE4110 is a highly integrated low power, low cost MCU with on-chip LCD driver. The product is ideal for low power, data acquisition applications that require small size, high integration and LCD functionality.
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| May 2011 |
Organizational Update on U.S. Operations from CEO Alan Taylor.
Micross Components announces recently-acquired Chip Supply’s transition to the Micross brand, effective May 23, 2011, including related leadership changes and the anticipated impact on U.S. operations going forward.
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| April 2011 |
Micross announces agreement with GeneSiC Semi.
GeneSiC is a pioneer and world leader in Silicon
Carbide technology, while also invested in high
power Silicon technologies. The global leading
manufacturers of industrial and defence systems
depend on GeneSiC's technology to elevate the
performance and efficiency of their products.
GeneSiC hold leading patents on wide band gap
power device technologies
Combining our bare die expertise with GeneSiC
technology provides the module designer with a
leading edge power product and world class
technical support.
Whether you want to use SiC schottky bare die to
improve your existing application or to gain a
performance edge in your next generation
application, trust Micross Components.
• High Voltage & Current with Zero Reverse Recovery
• Fast Switching Speeds & Lower Switching Losses
• Device Paralleling without Thermal Runaway
• Reduced Passive Components & Thermal Management
• Extreme Temperature Operation Capabilities*
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| April 2011 |
European Microelectronics Packaging Conference.
Micross Components will be exhibiting at the European Microelectronics Packaging Conference at the Brighton Metropole, 12th-15th September 2011.
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| April 2011 |
Linear Systems Offers Direct Alternative for Analog Devices MAT01.
The LS312 is a monolithic pair of Super-Beta High
Voltage NPN transistors mounted in a single TO-78
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching. The LS312 is a direct
electrical alternative / equivalent for Analog Devices
MAT01.
The hermetically sealed TO-78 is well suited for hi-rel
and harsh environment applications.
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| April 2011 |
Linear Systems Offers Direct Alternative for Analog Devices MAT01.
The LS312 is a monolithic pair of Super-Beta High
Voltage NPN transistors mounted in a single TO-71
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching. The LS312 is a direct
electrical alternative / equivalent for Analog Devices
MAT01.
The hermetically sealed TO-71 is well suited for hi-rel
and harsh environment applications.
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| April 2011 |
Linear Systems Offers Direct Alternative for Analog Devices MAT01.
The LS312 is a monolithic pair of Super-Beta High
Voltage NPN transistors mounted in a single SOIC
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching. The LS312 is a direct
electrical alternative / equivalent for Analog Devices
MAT01.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
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| March 2011 |
Astute Anti Counterfeit Awareness Workshop.
Open day please see PDF for details.
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| March 2011 |
Micross at the COG Conference
Micross Components will be exhibiting some of its many capabilities and components at the COG Conference being held in York on the 28th to the 30th of June 2011. The venue is the Royal York Hotel, having an ideal city centre location with on-site parking and in easy reach of York mainline Railway Station. The City of York has a long history dating back to Roman times, but it is for its Medieval buildings that the city is perhaps most famous, epitomized by the awe-inspiring York Minster, which has dominated the skyline of this walled city since its completion in the fifteenth century.
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| March 2011 |
New Agreement with ISSI to Supply MIL Temp Copper Lead Frame Memory
Integrated Silicon Solutions, Inc. (Nasdaq: ISSI), a leader in advanced memory solutions, and Micross Components, a global provider of distributed and specialty electronic components, announce an agreement to supply MIL Temp copper lead frame memory to benefit military and other harsh environment applications.
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| March 2011 |
MedTec 22nd - 24th of March 2011
Micross Exhibiting in Hall 2 : 315
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| February 2011 |
Micross Customer Satisfaction Survey.
Please fill in and return to Joanne Davidson at our Crewe site. Details are on the bottom of the survey.
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| February 2011 |
SMT to Die Conversion
Handheld, portable and wireless products continue to be driven by the need for reduction in size and weight while at the same time meeting the demand for increased functionality and performance. Component integration and the miniaturization of the electronic assemblies enables manufacturers to create these smaller, lighter, high performance products. Die assemblies, whether implemented as chip-on-board or flip chip, provide the required system performance and integration advantages.
From design to manufacture, understanding the benefits and trade-offs of utilizing unpackaged semiconductor die is key to an assembly manufacturer's successful conversion from Surface Mount Technology to bare die assemblies.
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| January 2011 |
Providing Sensitron products for 15 years
With our 15 year relationship with Sensitron we have the technical experience and product expertise needed to supply the optimum component and, upon request, secure customised process flows on your behalf.
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| January 2011 |
ISSI Known Good Die and Wafer Solutions
Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support, guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for DRAMs, PSRAMs and SRAMs. Core to our strategy is to provide long term support for applications such as automotive, communications and industrial markets where design cycles can be 3-4 years from concept to production, followed by 5-6 years product life. Recognizing the unique fit of ISSI products with die-level customers needs, ISSI created a business unit to focus on die-level products to provide highest quality products with long term support.
For your stacked die product to be successful you require a memory supplier who has extensive experience directly supporting the die-level market. This means a dedicated engineering team developing products which are specifically defined, designed, and tested to meet die customer needs.
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| December 2010 |
Hermetic Packaging for SemiSouth SiC
Micross Announces Development of Hermetic Packaging for
SemiSouth SiC Ultra High Temperature Applications to 260°C
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| December 2010 |
Introducing MSP430F2132 as Bare Die Product from Texas Instruments 16-bit Ultra-Low-Power Microcontroller, 8kB Flash, 512B RAM, 10 bit ADC, 1 USCI
Introducing MSP430F2132 as Bare Die Product from Texas Instruments 16-bit Ultra-Low-Power Microcontroller, 8kB Flash, 512B RAM, 10 bit ADC, 1 USCI
The Texas Instruments MSP430 family of ultra-low-power microcontrollers consists of several devices featuring different sets of peripherals targeted for various applications.
The architecture, combined with five low-power modes, is optimized to achieve extended battery life in portable measurement applications. The device features a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code efficiency. The digitally controlled oscillator (DCO) allows wake-up from low-power modes to active mode in less than 1 µs.
The MSP430F2132 is an ultra-low-power microcontroller with two built-in 16-bit timers, a fast 10-bit A/D converter with integrated reference and a data transfer controller (DTC), a comparator, built-in communication capability using the universal serial communication interface, and up to 24 I/O pins.
Designing applications with the MSP430F2132 in bare die form offers >50% X-Y-Z size reduction when compared with smallest available package. ? Bare die form factor greatly assists size sensitive applications.
Low Supply-Voltage Range, 1.8 V to 3.6 V
Ultra-Low Power Consumption:
Active Mode: 250 µA at 1 MHz, 2.2 V
Standby Mode: 0.7 µA
Off Mode (RAM Retention): 0.1 µA
Ultra-Fast Wake-Up From Standby Mode in
Less Than 1 µs
Smallest form factor
16-Bit RISC Architecture, 62.5-ns Instruction Cycle Time
16-Bit Timer0_A3 With Three Capture/Compare Registers
16-Bit Timer1_A2 With Two Capture/Compare Registers
On-Chip Comparator for Analog Signal Compare Function or
Slope Analog-to-Digital (A/D) Conversion
10-Bit 200-ksps A/D Converter With Internal Reference,
Sample-and-Hold, Autoscan, and Data Transfer Controller
Universal Serial Communication Interface
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| November 2010 |
Working With Sensitron Semiconductor
to support your entire die needs
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| November 2010 |
Sensitron TVS die products
1C6105 1C6144 1C6275
1C6105A 1C6144A 1C6275A
1C6106 1C6145 1C6276
1C6106A 1C6145A 1C6276A
1C6107 1C6146 1C6277
1C6107A 1C6146A 1C6277A
1C6108 1C6147 1C6278
1C6108A 1C6147A 1C6278A
1C6109 1C6148 1C6279
1C6109A 1C6148A 1C6279A
1C6110 1C6149 1C6280
1C6110A 1C6149A 1C6280A
1C6111 1C6150 1C6281
1C6111A 1C6150A 1C6281A
1C6112 1C6151 1C6282
1C6112A 1C6151A 1C6282A
1C6113 1C6152 1C6283
1C6113A 1C6152A 1C6283A
1C6114 1C6153 1C6284
1C6114A 1C6153A 1C6284A
1C6115 1C6154 1C6285
1C6115A 1C6154A 1C6285A
1C6116 1C6155 1C6286
1C6116A 1C6155A 1C6286A
1C6117 1C6156 1C6287
1C6117A 1C6156A 1C6287A
1C6118 1C6157 1C6288
1C6118A 1C6157A 1C6288A
1C6119 1C6158 1C6289
1C6119A 1C6158A 1C6289A
1C6120 1C6159 1C6290
1C6120A 1C6159A 1C6290A
1C6121 1C6160 1C6291
1C6121A 1C6160A 1C6291A
1C6122 1C6161 1C6292
1C6122A 1C6161A 1C6292A
1C6123 1C6162 1C6293
1C6123A 1C6162A 1C6293A
1C6124 1C6163 1C6294
1C6124A 1C6163A 1C6294A
1C6125 1C6164 1C6295
1C6125A 1C6164A 1C6295A
1C6126 1C6165 1C6296
1C6126A 1C6165A 1C6296A
1C6127 1C6166 1C6297
1C6127A 1C6166A 1C6297A
1C6128 1C6167 1C6298
1C6128A 1C6167A 1C6298A
1C6129 1C6168 1C6299
1C6129A 1C6168A 1C6299A
1C6130 1C6169 1C6300
1C6130A 1C6169A 1C6300A
1C6131 1C6170 1C6301
1C6131A 1C6170A 1C6301A
1C6132 1C6171 1C6302
1C6132A 1C6171A 1C6302A
1C6133 1C6172 1C6303
1C6133A 1C6172A 1C6303A
1C6134 1C6173 1C6463
1C6134A 1C6173A 1C6464
1C6135 1C6270 1C6465
1C6135A 1C6270A 1C6466
1C6136 1C6271 1C6467
1C6136A 1C6271A 1C6468
1C6137 1C6272 1C6471
1C6137A 1C6272A 1C6472
1C6142 1C6273 1C6473
1C6142A 1C6273A 1C6474
1C6143 1C6274 1C6475
1C6143A 1C6274A 1C6476
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| November 2010 |
Introducing PGA309 as Bare Die Product from Texas Instruments - Voltage output Programmable Sensor Conditioner
The PGA309 is a programmable analog signal conditioner designed for bridge sensors. The analog signal path amplifies the sensor signal and provides digital calibration for zero, span, zero drift, span drift, and sensor linearization errors with applied stress (pressure, strain, etc.). The calibration is done via a One-Wire digital serial interface or through a Two-Wire industry-standard connection. The calibration parameters are stored in external non-volatile memory to eliminate manual trimming and achieve long-term stability.The all-analog signal path contains a 2x2 input multiplexer (mux), auto-zero programmable-gain instrumentation amplifier, linearization circuit, voltage reference, internal oscillator, control logic, and an output amplifier. Programmable level shifting compensates for sensor DC offsets.The core of the PGA309 is the precision, low-drift, no 1/f noise Front-End PGA (Programmable Gain Amplifier). The overall gain of the Front-End PGA + Output Amplifier
can be adjusted from 2.7V/V to 1152V/V. The polarity of the inputs can be switched through the input mux to accommodate sensors with unknown polarity output. The Fault Monitor circuit detects and signals sensor burnout, overload, and system fault conditions. Designing applications with the PGA309 in bare die form allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity. Bare die form factor greatly assists size sensitive applications.
COMPLETE BRIDGE SENSOR CONDITIONER
VOLTAGE OUTPUT: Ratiometric or Absolute
DIGITAL CAL: No Potentiometers/Sensor Trims
SENSOR ERROR COMPENSATION
BRIDGE SENSORS
REMOTE 4-20mA TRANSMITTERS
STRAIN, LOAD, AND WEIGH SCALES
AUTOMOTIVE SENSORS
Span, Offset, and Temperature Drifts
LOW ERROR, TIME STABLE
SENSOR LINEARIZATION CIRCUITRY
TEMPERATURE SENSE: Internal or External
OVER/UNDER-SCALE LIMITING
SENSOR FAULT DETECTION
+2.7V TO +5.5V OPERATION
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| November 2010 |
Micross acquires Chip Supply
Click the PDF to view an official statement from our CEO
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| September 2010 |
Micross is exhibiting at ChipExpo 2010
Please join us at ChipExpo 2010 for the latest
information on high reliability, improved efficiency
& small form factor components for electronic applications.
For more information and to set up a meeting,
please email baredie@micross.com
For more information about ChipExpo see below
http://chipexpo.chipexpo.ru/eng/
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| September 2010 |
Micross is Exhibiting at Electronica 2010
We will be at Electronica November 9th to 12th 2010 in Hall A5 and booth 173.
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| September 2010 |
U406 from Linear Systems
The LSU406 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU406 features a 5-
mV offset and 10-µV/°C drift. The LSU406 is a direct
replacement for discontinued Siliconix U406.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
read more
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| September 2010 |
U405 from Linear Systems
The LSU405 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU405 features a 5-
mV offset and 10-µV/°C drift. The LSU405 is a direct
replacement for discontinued Siliconix U405.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
read more
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| September 2010 |
U404 from Linear Systems
The LSU404 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU404 features a 5-
mV offset and 10-µV/°C drift. The LSU404 is a direct
replacement for discontinued Siliconix U404.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
read more
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| September 2010 |
U403 from Linear systems
The LSU403 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU403 features a 5-
mV offset and 10-µV/°C drift. The LSU403 is a direct
replacement for discontinued Siliconix U403.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
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| September 2010 |
EXHIBITING AT THE DMSMS 2010
MICROSS COMPONENTS WILL BE EXHIBITING AT THE DMSMS 2010 CONFERENCE
Rio Hotel & Casino, Las Vegas, NV
October 25-28, 2010
Booth 307
The conference addresses Diminishing Material and Obsolesce issues faced by Military and Space electronics
manufacturers. This four-day conference features speakers from DoD and industry senior leadership, and is
organized with general sessions, technical sessions, and tutorials.
Representatives from Micross will be on-hand to discuss the various aspects of our products and services
including Custom Packaging Solutions; Turnkey Device Manufacturing (Space & Military); Device Testing /
Rescreening / Upscreening; Component Lead Modifi cation; Bare Die & Wafer Products and related services;
Standard Military Memory Products.
Come visit us at Booth 307!
For more information please visit the website www.dmsms2010.com.
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| September 2010 |
U402 from Linear Systems
The LSU402 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU402 features a 5-
mV offset and 10-µV/°C drift. The LSU402 is a direct
replacement for discontinued Siliconix U402.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
read more
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| August 2010 |
U401 from Linear Systems
The U401 is a high-performance monolithic dual
JFET features extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. This series has a wide
selection of offset and drift specifications with the U401
featuring a 5-mV offset and 10-µV/°C drift.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
read more
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| August 2010 |
New SiC products
SiC-based semiconductor devices offer significant advantages over competing products based on silicon,
GaAs and other materials for power-based electronic applications. In some applications, the properties and
parameters of SiC power transistors have allowed for replacement of up to 10 conventional solid-state devices.
Furthermore, products based on SiC provide up to an order of magnitude improvement in performance in
technical applications where silicon is already approaching theoretical limits. For these reasons, SiC products
will enable essential technical performance that, in turn, will allow customers to develop and market
innovative and competitive products. SiC bare die are specialized for high-power, high-efficiency, harshenvironment
power management and conversion applications. SiC bare die offer a very high reliability and
are well suited for Military, Aerospace and High Temperature electronics applications.
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| August 2010 |
Introducing XTR101 as Bare Die Product from Texas Instruments.Precision, Low Drift 4-20mA Two-Wire Transmitter
The XTR101 is a microcircuit, 4-20mA, two-wire transmitter containing a high accuracy instrumentation amplifier (IA), a voltage-controlled output current source, and dual-matched precision current reference.
This combination is ideally suited for remote signal conditioning of a wide variety of transducers such as thermocouples, RTDs, thermistors, and strain gauge bridges. State-of-the-art design and laser-trimming, wide temperature range operation, and small size make it very suitable for industrial process control applications. In addition, the optional external transistor allows even higher precision.
The two-wire transmitter allows signal and power to be supplied on a single wire pair by modulating the power-supply current with the input signal source.
The transmitter is immune to voltage drops from long runs and noise from motors, relays, actuators, switches, transformers, and industrial equipment. It can be used by
OEMs producing transmitter modules or by data acquisition system manufacturers.
Designing applications using bare die form offers >50% X-Y-Z size reduction when compared with the smallest available package.Bare die form factor greatly assists size sensitive applications.
Sensor Excitation Two 1mA sources
Loop Voltage(V) 11.6 to 40
Non-Linearity (Max)(%) 0.01
Output Zero Error (+/-)(Max)(uA)30
Vs(Min)(V)11.6
Vs(Max)(V)40
Span Error (Max)(%)5
Offset Voltage (+/-)(Max)(uV)30
Offset Voltage Drift (+/-)(Max)(uV/Degrees Celsius)0.75
CMRR, 60Hz(Min)(dB)90
Features
INSTRUMENTATION AMPLIFIER INPUT:
LOW OFFSET VOLTAGE, 30µV MAX
LOW VOLTAGE DRIFT, 0.75µV/ ?C
LOW NONLINEARITY, 0.1% MAX
TRUE TWO-WIRE OPTION:
POWER AND SIGNAL ONE WIRE PAIR
CURRENT MODE SIGNAL TRANSMISSION
HIGH NOISE IMMUNITY
DUAL MATCHED CURRENT SOURCES
WIDE SUPPLY RANGE: 11.6V TO 40V
SPECIFICATION RANGE: -40 ?C TO +85 ?C
Applications
INDUSTRIAL PROCESS CONTROL:
PRESSURE TRANSMITTERS
TEMERATURE TRANSMITTERS
MILLIVOLT TRANSMITTERS
RESISTANCE BRIDGE INPUTS
THERMO
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| July 2010 |
Introducing UC1842 / UC1843 / UC1844 / UC1845 as Bare Die Product from Texas Instruments Current Mode PWM Controller
The UC1842/3/4/5 family of control devices provides the necessary features to implement off-line or dc-to-dc fixed frequency current mode control schemes with a minimal external parts count. Internally implemented circuits include under-voltage lockout featuring start up current less than 1 mA, a precision reference trimmed for accuracy at the error amp input, logic to insure latched operation, a PWM comparator which also provides current limit control, and a totem pole output stage designed to source or sink high peak current. The output stage, suitable for driving N-Channel MOSFETs, is low in the off state.
Differences between members of this family are the under-voltage lockout thresholds and maximum duty cycle ranges. The UC1842 and UC1844 have UVLO thresholds of 16 VON and 10 VOFF, ideally suited to off-line applications. The corresponding thresholds for the UC1843 and UC1845 are 8.4 V and 7.6 V. The UC1842 and UC1843 can operate to duty cycles approaching 100%. A range of zero to 50% is obtained by the UC1844 and UC1845 by the addition of an internal toggle flip flop which blanks the output off every other clock cycle.
Designing applications using bare die form offers >50% X-Y-Z size reduction when compared with the smallest available package.Bare die form factor greatly assists size sensitive applications.
INTERNALLY TRIMMED BANDGAP REFERENCE
500-kHz OPERATION
LOW R ERROR AMP
LOW START-UP CURRENT(<1mA)
AUTOMATIC FEED FORWARD COMPENSATION
PULSE-BY-PULSE CURRENT LIMITING
ENHANCED LOAD RESPONSE CHARACTERISTICS
UNDER-VOLTAGE LOCKOUT WITH HYSTERESIS
DOUBLE PULSE SUPPRESSION
HIGH CURRENT TOTEM POLE OUTPUT
SMALLEST FORM FACTOR
OFFLINE AND DC-TO-DC CONVERTORS
HYBRID CIRCUITS
MULTIPLE CHIP MODULES
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| July 2010 |
Introducing OPA211-HT as Bare Die Product from Texas Instruments 1.1 nV/vHz Noise, Low Power, Precision Operational Amplifier
The OPA211 series of precision operational amplifiers achieves very low 1.1 nV/vHz noise density with a supply current of only 3.6 mA. This series also offers rail-to-rail output swing, which maximizes dynamic range.
The extremely low voltage and low current noise, high speed, and wide output swing of the OPA211 makes this device an excellent choice as a loop filter amplifier in PLL applications.
In precision data acquisition applications, the OPA211 series of op amps provides 700-ns settling time to 16-bit accuracy throughout 10-V output swings. This ac performance, combined with only 240-µV of offset and
0.35-µV/°C of drift over temperature makes the OPA211 ideal for driving high-precision 16-bit analog-to-digital converters (ADCs) or buffering the output of high-resolution digital-to-analog converters (DACs).
The OPA211 series is specified over a wide dual-power supply range of ±2.25 V to ±18 V, or for single-supply operation from 4.5 V to 36 V.This series of op amps is specified from TA = –55°C to 210°C.
•THD+N: -136 dB (G = 1, f = 1 kHz)
•OFFSET VOLTAGE: 240µV (max)
•LOW SUPPLY CURRENT: 6.0 mA/ch (TYP)
•UNITY-GAIN STABLE
•16-BIT SETTLING: 700 ns
•OUPUT CURRENT: 30 mA
•INPUT VOLTAGE NOISE:
80 nVPP (0.1 Hz to 10Hz) THD+N: - 136dB (G=1, F=1kHz)
•EXTREME TEMPERATURE APPLICATIONS
•DOWN HOLE DRILLING
•HIGH TEMPERATURE ENVIRONMENTS
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| June 2010 |
Product Announcement Introducing LPV324 Bare Die Product from National Semiconductor Ultra Low Power Consumption Operational Amplifier
The LPV324 is a low power (9 µA per channel at 5.0V) version of the LMV324 op amp particularly suited for Medical Sensing applications as bare die.
The LPV324 is the most effective solution for medical applications where low voltage, low power operation and space saving are critical. The LPV324 has rail-to-rail output swing capability and the input common-mode voltage range includes ground. The LPV324 exhibits excellent speed-power ratio, achieving 5 kHz of bandwidth with a supply current of only 9 µA.
Designing medical applications with the LPV324 in bare die form also allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity.
The chip is built with National's advanced submicron silicon-gate BiCMOS process. The LPV324 has bipolar input and output stages for improved noise performance and higher output current drive.
Supply Min 2.7 Volt
Supply Max 5 Volt
Gain Bandwidth 0.152 MHz
Offset Voltage max, 25C 7 mV
Max Input Bias Current 60 nA
Channels 4
Supply Current Per Channel 0.0075 mA
Input OutputType Vcm to V-, R-R Out
Slew Rate 0.1 Volts/usec
Output Current 17 mA
Shut down No
Voltage Noise 146 nV/root(Hz)
Features
•GUARANTEED 2.7V AND 5V PERFORMANCE
•NO CROSSOVER DISTORTION
•GAIN-BANDWITH PRODUCT 152 kHz
•LOW SUPPLY CURRENT 9 µA
•RAIL-TO-RAIL OUTPUT SWING @ 100KO LOAD V+-3.5 mV
V-+90 mV
•SMALLEST FORM FACTOR - 0.61mm x 0.97mm x 0.25mm*
(* Standard die thickness – custom thicknesses also available)
Applications
•MEDICAL ACTIVE FILTERS
•LOW VOLTAGE MEDICAL APPLICATIONS
•PORTABLE MEDICAL DEVICES
•MULTI-CHIP-MODULES
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| June 2010 |
Micross is Exhibiting at Electronica 2010
We will be at Electronica November 9th to 12th 2010 in Hall A5 and booth 173.
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| June 2010 |
3D7225 Monolithic 5-Tap Silicon Delay Line
3D7225 replaces obsolete Maxim DS1000 series Silicon Delay Line.
The 3D7225 5-Tap Delay Line product family consists of fixed-delay CMOS integrated circuits. Each package contains a single delay line, tapped and buffered at 5 points spaced uniformly in time. Tap-to-tap (incremental) delay values can range from 0.75ns through 700ns. The input is reproduced at the outputs without inversion, shifted in time as per the user-specified dash number. The 3D7225 is TTL- and CMOS-compatible, capable of driving ten 74LS-type loads, and features both rising- and falling-edge accuracy.
The all-CMOS 3D7225 integrated circuit has been designed as a reliable, economic alternative to hybrid TTL fixed delay lines. It is available in bare die and wafer format for maximum integration and size reduction in today’s complex hybrid circuit and Multi-Chip-Module applications.
All-silicon, low-power CMOS technology
TTL/CMOS compatible inputs and outputs
Low ground bounce noise
Leading- and trailing-edge accuracy
Delay range: 0.75ns through 3500ns
Delay tolerance: 2% or 0.5ns
Temperature stability: ±2% typical
VDD stability: ±1% typical (4.75V-5.25V)
Minimum input pulse width: 30% of total delay
N/A 3D7225-.75* 3.0 ± 0.5* 0.75 ± 0.4 41.7 MHz 166.7 MHz 12.0 ns 3.00 ns N/A
N/A 3D7225-1* 4.0 ± 0.5* 1.0 ± 0.5 37.0 MHz 166.7 MHz 13.5 ns 3.00 ns N/A
N/A 3D7225-1.5* 6.0 ± 0.5* 1.5 ± 0.7 31.2 MHz 166.7 MHz 16.0 ns 3.00 ns N/A
N/A 3D7225-2* 8.0 ± 0.5* 2.0 ± 0.8 25.0 MHz 166.7 MHz 20.0 ns 3.00 ns N/A
N/A 3D7225-2.5* 10.0 ± 0.5* 2.5 ± 1.0 22.2 MHz 125.0 MHz 22.5 ns 4.00 ns N/A
DS1000-20 3D7225-4* 16.0 ± 0.7* 4.0 ± 1.3 8.33 MHz 133.3 MHz 30.0 ns 6.00 ns EXACT
DS1000-25 3D7225-5 25.0 ± 1.0 5.0 ± 1.5 13.3 MHz 66.7 MHz 37.5 ns 7.50 ns EXACT
DS1000-50 3D7225-10 50.0 ± 1.0 10.0 ± 2.0 6.67 MHz 33.3 MHz 75.0 ns 15.0 ns EXACT
DS1000-100 3D7225-20 100.0 ± 2.0 20.0 ± 4.0 3.33 MHz 16.7 MHz 150 ns 30.0 ns EXACT
DS1000-250 3D7225-50 250.0 ± 5.0 50.0 ± 10 1.33 MHz 6.67 MHz 375 ns 75.0 ns EXACT
DS1000-500 3D7225-100 500 ± 10 100 ± 20 0.67 MHz 3.33
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| June 2010 |
Micross now offers Passive Components!
Chip Capacitors, Chip Resistors, MIL PRF 55681, M55342
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| June 2010 |
Introducing the
FCP22N60N / FCPF22N60NT N-Channel MOSFET 600V, 22A, 0.165W
as a bare die product from Fairchild Semiconductors.
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.
By utilizing this advanced technology and precise process
control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Features
RDS (on) = 0.140?? (Typ.) @ VGS = 10V, ID = 11A
BVDSS>650V @ TJ = 150ºC
Ultra Low Gate Charge (Typ. Qg = 45nC)
Low Effective Output Capacitance
100% Avalanche Tested
RoHS Compliant
Applications
AC/DC Convertor,Drives,Convertors,Inverters,SMPS
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| May 2010 |
Introducing TLC2252 as Bare Die Product from Texas Instruments
The TLC2252 is a dual operational amplifier from Texas Instruments. It exhibits rail-to-rail output performance for increased dynamic range in single- or split-supply applications. The TLC2252 consumes only 35 µA of supply current per channel. This micropower operation makes it a good choice for battery-powered applications. The noise performance has been dramatically improved over previous generations of CMOS amplifiers. The TLC2252 has a noise level of 19 nV/ Hz\ at 1kHz; four times lower than competitive micropower solutions (Fig. 1 Full datasheet).
The TLC2252 amplifier, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources, such as piezoelectric transducers or sensors.
Designing applications using TLC2252 in bare die form allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity. Bare Die also offers >50% X-Y-Z size reduction when compared with smallest available package. Bare die form factor greatly assists size sensitive applications.
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| May 2010 |
Introducing TLC2201 as Bare Die Product from Texas Instruments
Introducing TLC2201 as Bare Die Product from Texas Instruments
Advanced LinCMOS™ Low Noise Precision Operational Amplifier
The TLC2201 is a precision, low-noise operational amplifier using Texas Instruments Advanced LinCMOS process. This device combines the noise performance of the lowest-noise JFET amplifiers with the DC precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
Designing applications using TLC2201 in bare die form allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity. Bare Die also offers >50% X-Y-Z size reduction when compared with smallest available package. ??Bare die form factor greatly assists size sensitive applications.
Quick Reference Data
Number of Channels 1
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 4.6
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16
Iq per channel(Max)(mA) 1.5
GBW(Typ)(MHz) 1.9
Slew Rate(Typ)(V/us) 2.7
VIO (25 deg C)(Max)(mV) 0.5
Offset Drift(Typ)(uV/C) 0.5
IIB(Max)(pA) 100
CMRR(Min)(dB) 85
Vn at 1kHz(Typ)(nV/rtHz) 8
Rail-Rail Out
Features
• LOW INPUT OFFSET VOLTAGE . . . 500 µV Max
• EXCELLENT VOLTAGE OFFSET STABILITY
WITH TEMPERATURE…0.5 µV/°C TYP
• LOW INPUT BIAS CURRENT 1 pA
TYP AT TA = 25°C
• COMMON-MODE INPUT VOLTAGE RANGE
INCLUDES THE NEGATIVE RAIL
• FULLY SPECIFIED FOR BOTH SINGLE-S
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| May 2010 |
Technical bare die distributor.
tech support..design assistance..engineering..assembly support..distribution & service..Multi franchised/authorised..turnkey wafer processing...fast quote responce..extensive inventory
Technical bare die distributor.
tech support..design assistance..engineering..assembly support..distribution & service..Multi franchised/authorised..turnkey wafer processing...fast quote responce..extensive inventory
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| May 2010 |
Products and Services
Flyer
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| April 2010 |
Microsemi announces its last time buy (LTB) for all Deep Mesa Chips and TVS (Transient Voltage Suppressor) die. Micross can help with storing devices after LTB passed.
MD1055 MD1062 MD1099 MD1107 MD1119 MD1133 MD1134 MD1141 MD1149 MD1155 MD1161 MD1176 MD1190 MD1191 MD1193 MD1236 MD1240 MD1308 MD1329 MD1330 MD1331 MD1369 MD1370 MD1395 MD1396 MD1397 MD1421 MD1433 MD1443 MD1450 MD1454 MD1478 MD1498 MD1507 MD1508 MD1512 MD1516 MD1522 MD1525 MD1534 MD1539 MD1540 MD1541 MD1542 MD1545 MD1548 MD1555 MD1556 MD1557 MD1566 MD1568 MD1573 MD1574 MD1575 MD1576 MD1577 MD1578 MD1584 MD1585 MD1586 MD1587 MD1589 MD1597 MD1608 MD1615 MD1621 MD1632 MD1638 MD1639 MD1640 MD1643 MD1644 MD1647 MD1649 MD1651 MD1652 MD1654 MD1655 MD1657 MD1660 MD1661 MD1664 MD1665 MD1666 MD1667 MD1680 MD1682 MD1687 MD1695 MD1698 MD1699 MD1702 MD1706 MD1707 MD1709 MD1712 MD1713 MD1714 MD1718 MD1719 MD1720 MD1721 MD1722 MD1723 MD1725 MD1719 MD2060 MD2406 MD3070 MD3300 MD3585 MD3595 MD3600 MD3611 MD3612 MD3613 MD3614 MD3957 MD4001 MD4004 MD4005 MD4007 MD4148 MD4150 MD4245 MD4246 MD4247 MD4248 MD4249 MD427 MD431 MD4448 MD4460 MD4461 MD4462 MD4463 MD4464 MD4465 MD4466 MD4467 MD4470 MD4471 MD4472 MD4473 MD4474 MD4475 MD4476 MD4477 MD4478 MD4479 MD4480 MD4481 MD4482 MD4483 MD4484 MD4485 MD4486 MD4487 MD4488 MD4489 MD4490 MD4491 MD4492 MD4493 MD4494 MD4495 MD4496 MD459A MD4606 MD482B MD485B MD486B MD4938 MD4942 MD4943 MD4944 MD4947 MD4948 MD4954 MD4955 MD4956 MD4957 MD4958 MD4959 MD4960 MD4961 MD4962 MD4963 MD4964 MD4965 MD4966 MD4967 MD4968 MD4969 MD4970 MD4971 MD4972 MD4973 MD4974 MD4975 MD4976 MD4977 MD4978 MD4979 MD4980 MD4981 MD492 MD4983 MD4984 MD4985 MD4986 MD4987 MD4988 MD4989 MD4990 MD4991 MD4992 MD4993 MD4994 MD4995 MD4996 MD5063 MD5064 MD5065 MD5066 MD5067 MD5068 MD5069 MD5070 MD5071 MD5072 MD5073 MD5074 MD5075 MD5076 MD5077 MD5078 MD5079 MD5080 MD5081 MD5082 MD5083 MD5084 MD5085 MD5086 MD5087 MD5088 MD5099 MD5100 MD5101 MD5102 MD5103 MD5104 MD5105 MD5106 MD5107 MD5108 MD5109 MD5110 MD5111 MD5112 MD5113 MD5114 MD5115 MD5116 MD5117 MD5415 MD5416 MD5417 MD5418 MD5419 MD5420 MD5550 MD5551 MD5552 MD5553 MD5554 MD5614 MD5615 MD5617 MD5618 MD5619 MD5620 MD5621 MD5622 MD5623 M
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| April 2010 |
Microsemi announces its last time buy (LTB) for all Deep Mesa Chips and TVS (Transient Voltage Suppressor) die. Micross can help with storing devices after LTB passed.
1.5CKD6.8 1.5CKD6.8A 1.5CKD7.5 1.5CKD7.5A 1.5CKD7.5C 1.5CKD7.5CA 1.5CKD8.2 1.5CKD8.2A 1.5CKD8.2C 1.5CKD8.2CA 1.5CKD9.1 1.5CKD9.1A 1.5CKD9.1C 1.5CKD9.1CA 1.5CKD10 1.5CKD10A 1.5CKD10C 1.5CKD10CA 1.5CKD11 1.5CKD11A 1.5CKD11C 1.5CKD11CA 1.5CKD12 1.5CKD12A 1.5CKD12C 1.5CKD12CA 1.5CKD13 1.5CKD13A 1.5CKD13C 1.5CKD13CA 1.5CKD15 1.5CKD15A 1.5CKD15C 1.5CKD15CA 1.5CKD16 1.5CKD16A 1.5CKD16C 1.5CKD16CA 1.5CKD18 1.5CKD18A 1.5CKD18C 1.5CKD18CA
1.5CKD20 1.5CKD20A 1.5CKD20C 1.5CKD20CA 1.5CKD22 1.5CKD22A 1.5CKD22C 1.5CKD22CA 1.5CKD24 1.5CKD24A 1.5CKD24C 1.5CKD24CA 1.5CKD27 1.5CKD27A 1.5CKD27C 1.5CKD27CA 1.5CKD30 1.5CKD30A 1.5CKD30C 1.5CKD30CA 1.5CKD33 1.5CKD33A 1.5CKD33C 1.5CKD33CA 1.5CKD36 1.5CKD36A 1.5CKD36C 1.5CKD36CA 1.5CKD39 1.5CKD39A 1.5CKD39C 1.5CKD39CA 1.5CKD43 1.5CKD43A 1.5CKD43C 1.5CKD43CA 1.5CKD47 1.5CKD47A 1.5CKD47C 1.5CKD47CA 1.5CKD51 1.5CKD51A 1.5CKD51C 1.5CKD51CA 1.5CKD56 1.5CKD56A 1.5CKD56C 1.5CKD56CA 1.5CKD62 1.5CKD62A 1.5CKD62C 1.5CKD62CA 1.5CKD68 1.5CKD68A 1.5CKD68C 1.5CKD68CA 1.5CKD75 1.5CKD75A 1.5CKD75C 1.5CKD75CA 1.5CKD82 1.5CKD82A 1.5CKD82C 1.5CKD82CA 1.5CKD91 1.5CKD91A 1.5CKD91C 1.5CKD91CA 1.5CKD100 1.5CKD100A 1.5CKD100C 1.5CKD100CA 1.5CKD110 1.5CKD110A 1.5CKD110C 1.5CKD110CA 1.5CKD120 1.5CKD120A 1.5CKD120C 1.5CKD120CA 1.5CKD130 1.5CKD130A 1.5CKD130C 1.5CKD130CA 1.5CKD150 1.5CKD150A 1.5CKD150C 1.5CKD150CA 1.5CKD160 1.5CKD160A 1.5CKD160C 1.5CKD160CA 1.5CKD170 1.5CKD170A 1.5CKD170C 1.5CKD170CA 1.5CKD180 1.5CKD180A 1.5CKD180C 1.5CKD180CA 1.5CKD200 1.5CKD200A 1.5CKD200C 1.5CKD200CA
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| April 2010 |
CURRENT LEAD TIMES
As it may have come to your attention recently that supplier lead times are increasing.
This is due to the economic downturn last year where demand for semiconductors was very low
Now demand has ramped up again much faster than forecast. This means that overall wafer fab capacity in general is less than the current demand.
Longer term the semiconductor market is taking steps to increase capacity by restarting fabs and running extra lines however it is not an instant process due to the complexity of the technology + the size and scale of the wafer fab / manufacturing operation. It is comparable to an ocean liner taking several miles to turn in response as opposed to a small speedboat turning on its axis.
What does this mean for you?
• Most suppliers are increasing their standard lead-times due to the above situation, which in some cases could be up to 50 weeks or more.
• The current lead-times being generated are based on factory MRP systems and give a "rightnow" indication of capacity to deliver based on a worse case outlook. Please note these are systematic leadtimes which are calculated on the assumption an order is loaded onto the system that day.
• Once an order is on the system the factory is trying to reduce the leadtime wherever possible, we are also working closely with all our suppliers to achieve this.
• As a result we are recommending that customers place their orders as soon as possible, this will enable us to get a more realistic leadtime and expedite orders to meet individual demands.
Presently Power Semiconductors are showing the largest capacity problems however there are signs that IC manufacturing and Passive components will also be effected.
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| April 2010 |
Micross Components in partnership with Clifton Semiconductor offers a High Performance range of Gallium Arsenide Products
With lower power consumption, greater recovery speed, wider operating temperature range, lower weight, smaller dimensions and better radiation hardness, Cliftons GaAs products are intended for use in high-tech power electronics solutions, ranging from automotive and household appliances to military, aviation and space electronics. Users can gain considerable benefits in power system design due to lower weight, smaller size and reduced cooling requirements. Coupled with increased efficiency, durability and reliability, at higher operating frequencies, challenges and overtakes traditional Silicon products.
High Voltage, VRRM up to 1300V
High Current, up to 200A
Low voltage drop, VF < 1.6V at IFMax
Very low leakage currents < 1.1mA @ TJ = 260°C & VR = VRRM
High Temperature, TJ of 260°C, compared with Silicon's 175°
Ultrafast switching/commutating speeds, ˜ 30nS @ _IF/_t=200A/uS
Low junction capacitance, typically 18pF
Radiation tolerant, contact the factory for information
GaAs Applications
Automotive
Military
Mining
Power Supply
Commercial
Space
Aviation
Railway
GaAs features:
Higher Tj max than current Si, SiC, GaN products.
Higher power density per surface area.
Dynamics independent of temperature change.
Naturally low capacitance
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| March 2010 |
Online Hi-Rel capacitor selector - Search capacitor stock and suitable alternatives.
Micross Components are able to support both Active and Passive components for a wide range of applications, in particular, Military, Space and Automotive markets. We offer an extensive array of capacitors with a variety of dielectrics that are tailored for both Hi-Rel and commercial applications.
We understand the Hi-Rel industry and their need for reliability. We are able to provide Palladium Silver terminations, a unique solution to hybrid manufacturers whose design requires a conductive epoxy attach. Tin plated nickel terminations are also available for those designs that require solder.
Kitting Solutions
By sourcing both semiconductors and capacitors from Micross Components, our customers are able to complete their full kits from one supplier. As a result, customers are able to reduce their supplier lines whilst receiving full technical and customer support. If you are unable to find the capacitor you require using our tool above, our dedicated sales team will find you a suitable alternative.
Hi-Rel
NPO/COG dielectrics are ultra stable Class I devices with an operating temp of -55°C to 125°C and 0% aging rate. In addition to this, their linear temp coefficient, low loss and stable electrical properties with time, frequency and voltage make them a perfect candidate for circuitry requiring a very stable current.
For Military and Space applications that require higher reliability, COG, BX, and X7R chips can be tested in accordance to MIL PRF 55681, MIL PRF-123, MIL PRF-49467 or SCD to enable optimum reliability.
X7R Dielectric is a stable EIA Class II dielectric with +/-15% temp coefficient and predictable variation of electrical properties with time, temperature and voltage. These chips can also be tested in accordance to MIL PRF 55681, MIL PRF-123, MIL PRF-49467 or SCD to enable optimum reliability.
Hi-Temp
For extreme heat applications, such as Oil Exploration and Automotive/Aeronautical engine circuitry, a range of surface mount devices in sizes 0805 t
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| February 2010 |
Introducing the OPA333 bare die by Texas Instruments....
Introducing OPA333 as Bare Die Product from Texas Instruments.
1.8V, 17µA, 2µV, microPOWER CMOS Zero-Drift Operational Amplifier
The OPA333 CMOS operational amplifier uses a proprietary auto-calibration technique to simultaneously provide very low offset voltage (10µV max) and near-zero drift over time and temperature. These miniature, high-precision, low quiescent current amplifiers offer high-impedance inputs that have a common-mode range 100mV beyond the rails and rail-to-rail output that swings within 50mV of the rails. Single or dual supplies as low as +1.8V (±0.9V) and up to +5.5V (±2.75V) may be used. They are optimized for low-voltage, single-supply operation.
The OPA333 family offers excellent CMRR without the crossover associated with traditional complementary input stages. This design results in superior performance for driving analog-to-digital converters (ADCs) without degradation of differential linearity.
Designing applications with the OPA333 in bare die form allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity. Bare Die also offers >50% X-Y-Z size reduction when compared with smallest available package. Bare die form factor greatly assists size sensitive applications.
Features
•LOW OFFSET VOLTAGE: 10µV (max)
•ZERO DRIFT: 0.05µV/°C (max)
•0.01Hz to 10Hz NOISE: 1.1µVPP
•QUIESCENT CURRENT: 17µA
•SINGLE-SUPPLY OPERATION
•SUPPLY VOLTAGE: 1.8V to 5.5V
•RAIL-TO-RAIL INPUT/OUTPUT
•SMALLEST FORM FACTOR - 0.99 x 0.8 x 0.65*
(* Standard die thickness – custom thicknesses also available)
Applications
•TEMPERATURE MEASUREMENTS
•MEDICAL DEVICES
•BATTERY POWERED INSTRUMENTATION
•HYBRID CIRCUITS
•MULTI-CHIP-MODULES
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| February 2010 |
PRECISION ANALOG BY TEXAS INSTRUMENTS......
Texas Instruments offers a broad range of high end precision analog products in bare die form which are particularly suited to performance hybrid circuits and Multiple-Chip-Modules (MCMs)
High Performance Amplifiers & Linear Solutions:
*Op Amps
*Audio Amplifiers
*Instrumentation Amplifiers
*Programmable Gain Amplifiers
*Current Shunt Monitors
*Comparators and Variable Gain Amplifiers
*and many more…
Integrating the well respected portfolio of Burr Brown products with TI’s own already well established offering makes TI an ideal developer’s choice to design and innovate custom products. A designer can benefit from the many advantages that using bare die offers such as smaller X-Y-Z dimensions, improved electrical potential and higher system integration.
Wide available range - Unlike most semiconductor suppliers, every single product sold in package form at Texas Instruments is potentially available in bare die form*.
Low MOQs for design-in - MOQs typically start with a single wafer. Lower qtys for prototyping can also be obtained via TI’s die partner subject to stock and availability.
Lower obsolescence - Leveraging their multiple wafer fabs TI is able to be more flexible with their production process. This means parts are likely to stay active for a longer period of time.
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| January 2010 |
We are delighted to announce the launch of MICROSS COMPONENTS
Micross Components is an exciting new development that brings together a number of our hi-tech companies.
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