Super Junction Transistors SJTs

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Super Junction Transistors (SJTs)

SJT Bare Die

By using bare die form, operation above the maximum temperature rating of the standard package part datasheet can be achieved. In addition, Micross Components has capability to qualify and characterize any GeneSiC SJT die up to 300°C on request.

About SJTs

Currently, nearly every power system uses Si-based IGBs (Insulated-Gate Bipolar Transistor) and GTO (Gate Turn-Off) thyristor technology as the active component in switching. While these Si-based technologies offer lower up-front costs, they result in inefficient and bulky power conversion equipment because:

  • The maximum voltage achievable in a Silicon power device is limited to <6.5kV, which necessitates stacking of multiple devices to achieve the required application voltages.
  • Most silicon transistors are limited to an operating temperature of less than 125°C, which necessitates the use of excessive thermal management systems.
  • Multi-kV silicon transistors are limited to an operating frequency of less than 5kHz, which results in the use of bulky inductors and capacitors in power circuits.

Additionally, these limitations result in excessive system complexity, high maintenance costs due to the system's complexity, lowered power capability, lower efficiency, need for active cooling, and increased system size and weight.

Incorporating high voltage, high frequency-capable, high-temperature SiC Super Junction Transistors (SJTs) will increase the power conversion efficiency and reduce the size/weight/volume of power systems. This will also provide high power quality, reduce overall system complexity and increase system dependability.

Source: Silicon Carbide Super Junction Transistor by Dr. Ranbir Singh, GeneSiC Semiconductor

Benefits of SJTs

  • Higher current rating as compared to competing SiC switch technologies
  • Higher switching frequency than power MOSFETs
  • Higher current at high temperatures
  • Inherently superior high temperature capability and reliability due to independence from SiC MOS issues

SiC Junction Transistor Products

Datasheet Part # VRRM (V) IF (A) Top Bottom Tj (°C) IR@250°C (µA) VF@25°C (V) SPICE Model Status
pdf GA05JT06-CAL 600 5 Aluminum (Al) Gold (Au) 250 0.007 2.1 GA05JT06-CAL-SPC Production
pdf GA10JT06-CAL 600 10 Aluminum (Al) Gold (Au) 250 2.5 1.7 GA10JT06-CAL-SPC Production
pdf GA20JT06-CAL 600 20 Aluminum (Al) Gold (Au) 250 2.5 1.3 GA20JT06-CAL-SPC Production
pdf GA20JT12-CAL 1200 20 Aluminum (Al) Gold (Au) 250 2.5 1.7 GA20JT12-CAL-SPC 2014, Q1
pdf GA50JT06-CAL 600 50 Aluminum (Al) Gold (Au) 250 2.5 1.3 GA50JT06-CAL-SPC Production
pdf GA50JT12-CAL 1200 50 Aluminum (Al) Gold (Au) 250 2.5 1.3 GA50JT12-CAL-SPC 2014, Q1

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