Silicon Carbide SiC Schottky Diodes

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SiC Schottky Bare Die

About SiC Schottkys

Historically, Schottky diodes constructed using silicon have been limited in their maximum breakdown voltage. Increasing breakdown voltage >200V results in significantly higher on-resistance and leakage current which are the key performance parameters of any diode. However, benefits of Schottky construction are its switching speed and lack of any recovery time compared with other rectifiers in the diode family. This makes silicon Schottkys very successful in mainstream low voltage power electronics. For higher voltages in the power discrete market, typically P-N junction rectifiers are used. Although, P-N junction rectifiers may have voltages up to 1700V, they are slower and exhibit more switching losses than a theoretical Schottky would achieve were it capable of handling the equivalent voltage.

Today, SiC with its significantly higher breakdown voltage capability, combined with the Schottky construction, provides all the performance benefits of Schottky switching without the ramp of on-resistances and leakage current observed with silicon. SiC is also exceptionally rugged and SiC Schottky diodes show very little variance in performance as temperature increases. As a result, better power densities and higher switching efficiencies can be achieved. Also, there is a reduction in size and number of peripheral passive components needed in Schottky diodes compared with silicon diodes.

Benefits of SiC Schottky Die

  • Higher switching frequencies - no reverse recovery charge accumulates during the diode's normal conduction period (No trr)
  • No reverse recovery charge = less heat and low switching losses
  • No safety margins necessary for startup and cycle drop out operations
  • Cool operation during transient thermal load steps
  • Improved light load efficiency by significantly reduced device capacitances
  • Break down voltages >1700V

Applications

  • Solar Power
  • Traction controls
  • On board power generation and control
  • High speed motor drives
  • Machine tools
  • Robotics and HF supplies

Available Products

SiC Schottky Power Diodes

Datasheet Part # VRRM (V) IF (A) Top Bottom Tj (°C) IR@250°C (µA) VF@25°C (V) SPICE Model Status
pdf GAP05SLT80-CAL 8000 0.05 Aluminum (Al) Gold (Au) 175 3.3 4.6 GAP05SLT80-CAL-SPC Production
pdf GAP3SHT33-CAL 3300 0.3 Aluminum (Al) Gold (Au) 225 2 2 GAP3SHT33-CAL-SPC Production
pdf GAP3SHT33-CAU 3300 0.3 Gold (Au) Gold (Au) 225 2 2 GAP3SHT33-CAU-SPC Production
pdf GB01SHT06-CAL 650 1 Aluminum (Al) Gold (Au) 250 2 1.5 GB01SHT06-CAL-SPC Production
pdf GB01SHT06-CAU 650 1 Gold (Au) Gold (Au) 250 2 1.5 GB01SHT06-CAU-SPC Production
pdf GB01SHT12-CAL 1200 1 Aluminum (Al) Gold (Au) 250 7 1.96 GB01SHT12-CAL-SPC Production
pdf GB01SHT12-CAU 1200 1 Gold (Au) Gold (Au) 250 7 1.96 GB01SHT12-CAU-SPC Production
pdf GB02SLT06-CAL 650 2 Aluminum (Al) Gold (Au) 175 8 1.65 GB02SLT06-CAL-SPC Production
pdf GB05SHT06-CAL 650 5 Aluminum (Al) Gold (Au) 250 8 1.65 GB05SHT06-CAL-SPC Production
pdf GB05SHT06-CAU 650 5 Gold (Au) Gold (Au) 250 8 1.65 GB05SHT06-CAU-SPC Production
pdf GB05SHT12-CAL 1200 5 Aluminum (Al) Gold (Au) 250 21 2.1 GB05SHT12-CAL-SPC Production
pdf GB05SHT12-CAU 1200 5 Gold (Au) Gold (Au) 250 21 2.1 GB05SHT12-CAU-SPC Production
pdf GB10SLT06-CAL 650 10 Aluminum (Al) Gold (Au) 175 40 1.67 GB10SLT06-CAL-SPC Production
pdf GB10SLT12-CAL 1200 10 Aluminum (Al) Gold (Au) 175 40 1.67 GB10SLT12-CAL-SPC Production
pdf GB20SHT06-CAL 650 20 Aluminum (Al) Gold (Au) 250 32 1.67 GB20SHT06-CAL-SPC Production
pdf GB20SHT06-CAU 650 20 Gold (Au) Gold (Au) 250 32 1.67 GB20SHT06-CAU-SPC Production
pdf GB20SHT12-CAL 1200 20 Aluminum (Al) Gold (Au) 250 56 2.2 GB20SHT12-CAL-SPC Production
pdf GB20SHT12-CAU 1200 20 Gold (Au) Gold (Au) 250 56 2.2 GB20SHT12-CAU-SPC Production
pdf GB50SLT12-CAL 1200 50 Aluminum (Al) Gold (Au) 175 200 1.5 GB50SLT12-CAL-SPC Production

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