Schottky Bare Die

About SiC Schottkys

Historically the schottky diode constructed using silicon has been limited in maximum breakdown voltage. Increasing breakdown voltage >200V results in significantly higher on-resistance and leakage current which are key performance parameters of any diode. However the benefits of the schottky construction are its switching speed and lack of any recovery time compared with other rectifiers in the diode family. This made silicon schottkys a big hit and very succesful in mainstream low voltage power electronics. For higher voltages in the Power Discrete market typically P-N junction rectifers are used which can handle higher voltages up to 1700V but are slower and exhibit more switching losses than a theoretical Schottky performance would achieve (were it be capable of that voltage).

Today SiC with it’s significantly higher breakdown voltage capability combined with the Schottky construction provides all the performance benefits of Schottky switching without the ramp of on-resistances and leakage current observed with Silicon. SiC is also exceptionally rugged and SiC schottky diodes show very little variance in performance as temperature increases. As a result better power densitys can be achieved, higher switching efficiencies and also a reduction in size and number of peripheral passive components needed compared with Silicon diodes.

Benefits

• SiC Schottky die - Higher switching frequencies because no reverse recovery charge accumulates during the diode’s normal conduction period (No trr)
• SiC Schottky die - No reverse recovery charge = less heat and low switching losses
• SiC Schottky die - No safety margins necessary for start up and cycle drop out operations
• SiC Schottky die - Cool operation during transient thermal load steps
• SiC Schottky die - Improved light load efficiency by significantly reduced device capacitances
• SiC Schottky die - Break down voltages >1700V!

Applications

• Solar Power
• Traction controls
• On board power generation and control
• High speed motor drives
• Machine tools
• Robotics and HF supplies

Available Products

Schottky Barrier Diode - Bare Die

The electrical advantages of the Schottky structure with high voltage capabilities & temperature independance.

By using bare die form operation above the maximum temperature rating of the standard package part datasheet can be achieved*.  In addition Micross Components has capability to qualify and characterize any GeneSiC schottky die up to 300°C on request.

The package part datasheet provides indicative electrical performance of bare die for rated temperatures only.*

Datasheet	Part Number	Amps	VRRM (V)
	GB01SLT12	1	1200
	GA01SHT18	1	1800
	GA01SLT20	1	2000
	GB02SLT12	2	1200
	GB03SLT12	3	1200
	GB05SLT12	5	1200
	GB07SHT12	7	1200
	GB10SLT12	10	1200
	GB20SLT12	20	1200
	GBP3SHT24	0.3	2400

Contact Us for a bare die datasheet

* Performance will very depending on choice of substrate and assembly technique.

Bare Die Datasheets

Datasheet	Part Number	Amps	VRRM (V)	Topside
	GB01SHT065-CAL	1	650	Aluminum
	GB01SHT065-CAU	1	650	Gold
	GB01SHT12-CAL	1	1200	Aluminum
	GB01SHT12-CAU	1	1200	Gold
	GB05SHT065-CAL	5	650	Aluminum
	GB05SHT065-CAU	5	650	Gold
	GB05SHT12-CAL	5	1200	Aluminum
	GB05SHT12-CAU	5	1200	Gold
	GB20SHT065-CAL	20	650	Aluminum
	GB20SHT065-CAU	20	650	Gold
	GB20SHT12-CAL	20	1200	Aluminum
	GB20SHT12-CAU	20	1200	Gold