SiC Schottky Diode Bare Die
Available Products
Schottky Barrier Diode - Bare Die
The electrical advantages of the Schottky structure with high voltage capabilities & temperature independance.
By using bare die form operation above the maximum temperature rating of the standard package part datasheet can be achieved*. In addition Micross Components has capability to qualify and characterize any GeneSiC schottky die up to 300°C on request.
The package part datasheet provides indicative electrical performance of bare die for rated temperatures only.*
1200V, 1A
- Schottky Barrier Diode -
GB01SLT12
-
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for a bare die datasheet
1200V, 2A
- Schottky Barrier Diode -
GB02SLT12
-
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1200V, 3A
- Schottky Barrier Diode -
GB03SLT12
-
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1200V, 5A
- Schottky Barrier Diode -
GB05SLT12
-
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1200V, 7A
- Schottky Barrier Diode -
GB07SHT12
-
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1200V, 10A
- Schottky Barrier Diode -
GB10SLT12
-
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1200V, 20A
- Schottky Barrier Diode -
GB20SLT12
-
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1800V, 1A
- Schottky Barrier Diode -
GA01SHT18
-
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2000V, 1A
- Schottky Barrier Diode -
GA01SLT20
-
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2400V, 0.3A
- Schottky Barrier Diode -
GBP3SHT24
-
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for a bare die datasheet
* Performance will very depending on choice of substrate and assembly technique.