Bare Die GaAs Rectifiers
Micross Components in partnership with Clifton Semiconductor offers a High Performance range of Gallium Arsenide Products
Introduction
Initially featuring such devices as Clifton's high-efficiency, temperature-independent GaAs rectifier diode product line, Micross Components represent the complete Clifton product range of die product, including other III-V GaAs products as they become available in the near future.
With lower power consumption, greater recovery speed, wider operating temperature range, lower weight, smaller dimensions and better radiation hardness, Cliftons GaAs products are intended for use in high-tech power electronics solutions, ranging from automotive and household appliances to military, aviation and space electronics. Users can gain considerable benefits in power system design due to lower weight, smaller size and reduced cooling requirements. Coupled with increased efficiency, durability and reliability, at higher operating frequencies, challenges and overtakes traditional Silicon products.
Clifton's current range of GaAs p-i-n rectifiers employ a liquid phase epitaxy (LPE) construction technology to provide a significantly enhanced thermal performance over current Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. These devices are able to stabily operate well in excess of the maximum junction temperature (TJ) of more traditional diodes, whilst maintaining parity of performance in terms of key parameters, such as recovery time and forward voltage.
GaAs diode features include:
- High maximum junction temperature; up to +300°C vs. +175°C for silicon diodes
- Lower and temperature independent dynamic recovery characteristics over the full specified temperature range
- Lower leakage current at all operating temperatures
- Very low capacitance
Clifton has successfully implemented a liquid phase epitaxy (LPE) processing technology for production of high-voltage GaAs p-i-n structures. This is a technique used for the bulk growth of crystal layers from the melt on solid substrates, such that the crystal nature of the substrate is maintained throughout the grown layer. The production sequence covers a number of steps under careful control, starting from the surface layer crystaline growth (p-i-n and n+ epitaxy), followed by metallization (vacuum evaporation to create a Ohmic contact layer), photolithography (printing a frame for etching), passivation (applying protection for the junction layer), dicing, verifying and finally the testing of the die product. All steps are preceded by a chemical and/or mechanical treatment; a quality control and monitor system operates throughout the whole production route to guarantee the excellency of the final product.
For further product and die information, please contact Micross Components, on +44(0)1603 788 967
Features
HOT, HOT, HOT … working at 300°C!!!
In high reliability power applications, the traditional use of fast switching Silicon diodes is becoming supplanted by the use of Gallium Arsenide (GaAs) diode technology. Coupling this GaAs technology with PiN diode fabrication creates an ultrafast diode junction, based upon minority carriers rather than Silicon's majority carriers, resulting in a significantly lower junction capacitance … hence 'easier' to switch.
Looking at the comparative benefits of GaAs versus Silicon when used in a conventional switch-mode power supply application, GaAs technologies gives lower reverse-voltage leakages, low forward voltage drop, a higher operating temperature and improved radiation tolerance � finally giving a cooler, more reliable device. The faster commutating and switching capability of the GaAs PiN junction minimizes switching losses, thereby improving overall PSU conversion efficiency. The benefits of these enhancements are keenly felt, especially in the adverse environments found in automotive, aerospace/space and Oil/gas arenas.
Even when comparing GaAs devices with other alternative technologies, such as GaN and SiC, the inherent properties of the PiN junction provides better temperature performance without the essential electrical properties degrading at elevated temperatures!
Can't have it all? With Micross Components's range of GaAs PiN diodes, you can �
- High Voltage, VRRM up to 1200V
- High Current, IF 15A and beyond
- Low voltage drop, VF < 1.6V at IFMax
- Very low leakage currents < 1.1mA @ TJ = 300°C & VR = VRRM!!!
- High Temperature, TJ of 300�C, compared with Silicon's 175°C
- Ultrafast switching/commutating speeds, ˜ 30nS @ δIF/δt=200A/uS
- Low junction capacitance, typically 18pF
- Radiation tolerant, contact the factory for information
These devices are available from Micross Components as both die product, or as packaged devices in a wide variety of package formats. Contact Micross Components for further details.
Datasheets
| Part Number |
Description |
Package |
PDF |
| DUL1504AL |
400V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-257Al |
 |
| DUL1504ALN |
400V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-257AlN |
|
| DUL1504S |
400V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-276AB |
|
| DUL1504GG |
400V 15Amp Ultrafast Low VF GaAs Rectifier |
BARE DIE |
|
| DUL1504AG |
400V 15Amp Ultrafast Low VF GaAs Rectifier |
BARE DIE |
|
|
| DUL1505AL |
500V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-257Al |
|
| DUL1505ALN |
500V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-257AlN |
|
| DUL1505S |
500V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-276AB |
|
| DUL1505GG |
500V 15Amp Ultrafast Low VF GaAs Rectifier |
BARE DIE |
|
| DUL1505AG |
500V 15Amp Ultrafast Low VF GaAs Rectifier |
BARE DIE |
|
|
| DUL1506AL |
600V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-257Al |
|
| DUL1506ALN |
600V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-257AlN |
|
| DUL1506S |
600V 15Amp Ultrafast Low VF GaAs Rectifier |
TO-276AB |
|
| DUL1506GG |
600V 15Amp Ultrafast Low VF GaAs Rectifier |
BARE DIE |
|
| DUL1506AG |
600V 15Amp Ultrafast Low VF GaAs Rectifier |
BARE DIE |
|
|
| Part Number |
Description |
Package |
PDF |
| DUT1505AL |
500V 15Amp Ultrafast GaAs Rectifier |
TO-257Al |
|
| DUT1505ALN |
500V 15Amp Ultrafast GaAs Rectifier |
TO-257AlN |
|
| DUT1505S |
500V 15Amp Ultrafast GaAs Rectifier |
TO-276AB |
|
| DUT1505GG |
500V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
| DUT1505AG |
500V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
|
| DUT1506AL |
600V 15Amp Ultrafast GaAs Rectifier |
TO-257Al |
|
| DUT1506ALN |
600V 15Amp Ultrafast GaAs Rectifier |
TO-257AlN |
|
| DUT1506S |
600V 15Amp Ultrafast GaAs Rectifier |
TO-276AB |
|
| DUT1506GG |
600V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
| DUT1506AG |
600V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
|
| DUT1507AL |
700V 15Amp Ultrafast GaAs Rectifier |
TO-257Al |
|
| DUT1507ALN |
700V 15Amp Ultrafast GaAs Rectifier |
TO-257AlN |
|
| DUT1507S |
700V 15Amp Ultrafast GaAs Rectifier |
TO-276AB |
|
| DUT1507GG |
700V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
| DUT1507AG |
700V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
|
| DUT1508AL |
800V 15Amp Ultrafast GaAs Rectifier |
TO-257Al |
|
| DUT1508ALN |
800V 15Amp Ultrafast GaAs Rectifier |
TO-257AlN |
|
| DUT1508S |
800V 15Amp Ultrafast GaAs Rectifier |
TO-276AB |
|
| DUT1508GG |
800V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
| DUT1508AG |
800V 15Amp Ultrafast GaAs Rectifier |
BARE DIE |
|
Downloads
| Downloadable Data |
|
| Clifton Rectifier and Micross brochure |
|